AFP1303 Datasheet and Replacement
Type Designator: AFP1303
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: SOT-323
AFP1303 substitution
AFP1303 Datasheet (PDF)
afp1303.pdf

AFP1303 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1303, P-Channel enhancement mode -20V/-0.45A, RDS(ON)= 600 m@ VGS =-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.35A, RDS(ON)= 800 m@ VGS =-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.25A, RDS(ON)= 1300 m@ VGS =-1.8V These devices are particular
Datasheet: AFN9977 , AFN9987 , AFN9995S , AFN9997 , AFP1013 , AFP1023 , AFP1033 , AFP1073 , IRF730 , AFP1413 , AFP1433 , AFP1810 , AFP1913 , AFP2301 , AFP2301A , AFP2301AS , AFP2301S .
Keywords - AFP1303 MOSFET datasheet
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History: AOB410L | 2SK2968



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