All MOSFET. AFP1303 Datasheet

 

AFP1303 Datasheet and Replacement


   Type Designator: AFP1303
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: SOT-323
 

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AFP1303 Datasheet (PDF)

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AFP1303

AFP1303 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1303, P-Channel enhancement mode -20V/-0.45A, RDS(ON)= 600 m@ VGS =-4.5V MOSFET, uses Advanced Trench Technology to -20V/-0.35A, RDS(ON)= 800 m@ VGS =-2.5V provide excellent RDS(ON), low gate charge. -20V/-0.25A, RDS(ON)= 1300 m@ VGS =-1.8V These devices are particular

Datasheet: AFN9977 , AFN9987 , AFN9995S , AFN9997 , AFP1013 , AFP1023 , AFP1033 , AFP1073 , IRF730 , AFP1413 , AFP1433 , AFP1810 , AFP1913 , AFP2301 , AFP2301A , AFP2301AS , AFP2301S .

History: H5N2509P

Keywords - AFP1303 MOSFET datasheet

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