All MOSFET. AFP1433 Datasheet

 

AFP1433 Datasheet and Replacement


   Type Designator: AFP1433
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOT-323
 

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AFP1433 Datasheet (PDF)

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AFP1433

AFP1433 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1433, P-Channel enhancement mode -30V/-3.0A,RDS(ON)=150m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.6A,RDS(ON)=185m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

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AFP1433

AFP1413 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1413, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=125m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=160m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly su

Datasheet: AFN9995S , AFN9997 , AFP1013 , AFP1023 , AFP1033 , AFP1073 , AFP1303 , AFP1413 , NCEP15T14 , AFP1810 , AFP1913 , AFP2301 , AFP2301A , AFP2301AS , AFP2301S , AFP2303 , AFP2303A .

History: SI1031R | HGB195N15S

Keywords - AFP1433 MOSFET datasheet

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