AFP1433 Datasheet. Specs and Replacement

Type Designator: AFP1433  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: SOT-323

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AFP1433 datasheet

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AFP1433

AFP1433 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1433, P-Channel enhancement mode -30V/-3.0A,RDS(ON)=150m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.6A,RDS(ON)=185m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s... See More ⇒

 9.1. Size:524K  alfa-mos
 afp1413.pdf pdf_icon

AFP1433

AFP1413 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1413, P-Channel enhancement mode -20V/-3.0A,RDS(ON)=125m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=160m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly su... See More ⇒

Detailed specifications: AFN9995S, AFN9997, AFP1013, AFP1023, AFP1033, AFP1073, AFP1303, AFP1413, IRF1405, AFP1810, AFP1913, AFP2301, AFP2301A, AFP2301AS, AFP2301S, AFP2303, AFP2303A

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