All MOSFET. AFP1810 Datasheet

 

AFP1810 Datasheet and Replacement


   Type Designator: AFP1810
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: SOP-8P
 

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AFP1810 Datasheet (PDF)

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AFP1810

AFP1810 Alfa-MOS 100V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1810, P-Channel enhancement mode -100/-2.0A,RDS(ON)= 230m@VGS= -10V MOSFET, uses Advanced Trench Technology -100/-1.0A,RDS(ON)= 245m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl

Datasheet: AFN9997 , AFP1013 , AFP1023 , AFP1033 , AFP1073 , AFP1303 , AFP1413 , AFP1433 , MMIS60R580P , AFP1913 , AFP2301 , AFP2301A , AFP2301AS , AFP2301S , AFP2303 , AFP2303A , AFP2307A .

History: DSK9J01 | 2N7002-7 | NCE3N170PF | 2N7055 | IRFN250SMD | AOD442

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