AFP1810 Datasheet. Specs and Replacement

Type Designator: AFP1810  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm

Package: SOP-8P

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AFP1810 datasheet

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AFP1810

AFP1810 Alfa-MOS 100V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1810, P-Channel enhancement mode -100/-2.0A,RDS(ON)= 230m @VGS= -10V MOSFET, uses Advanced Trench Technology -100/-1.0A,RDS(ON)= 245m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl... See More ⇒

Detailed specifications: AFN9997, AFP1013, AFP1023, AFP1033, AFP1073, AFP1303, AFP1413, AFP1433, 7N60, AFP1913, AFP2301, AFP2301A, AFP2301AS, AFP2301S, AFP2303, AFP2303A, AFP2307A

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