All MOSFET. AFP1913 Datasheet

 

AFP1913 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AFP1913
   Marking Code: 13*
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 1.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 1 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: SOT-363

 AFP1913 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AFP1913 Datasheet (PDF)

 ..1. Size:587K  alfa-mos
 afp1913.pdf

AFP1913 AFP1913

AFP1913 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1913, P-Channel enhancement mode -20V/-0.6A, RDS(ON)= 600 m@ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-0.5A, RDS(ON)= 800 m@ VGS =-2.5V to provide excellent RDS(ON), low gate charge. -20V/-0.4A, RDS(ON)= 1600 m@ VGS =-1.8V These devices are particu

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BL4N80A-A | APQ05SN60A | DMP2200UFCL | BSZ024N04LS6 | BL7N60A-P | 8N60F

 

 
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