AFP1913 Datasheet. Specs and Replacement

Type Designator: AFP1913  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 20 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: SOT-363

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AFP1913 datasheet

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AFP1913

AFP1913 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP1913, P-Channel enhancement mode -20V/-0.6A, RDS(ON)= 600 m @ VGS =-4.5V MOSFET, uses Advanced Trench Technology -20V/-0.5A, RDS(ON)= 800 m @ VGS =-2.5V to provide excellent RDS(ON), low gate charge. -20V/-0.4A, RDS(ON)= 1600 m @ VGS =-1.8V These devices are particu... See More ⇒

Detailed specifications: AFP1013, AFP1023, AFP1033, AFP1073, AFP1303, AFP1413, AFP1433, AFP1810, IRFZ48N, AFP2301, AFP2301A, AFP2301AS, AFP2301S, AFP2303, AFP2303A, AFP2307A, AFP2309

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