AFP2911W Datasheet. Specs and Replacement
Type Designator: AFP2911W 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 6.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 80 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.096 Ohm
Package: DFN2X2-6L
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AFP2911W substitution
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AFP2911W datasheet
afp2911w.pdf
AFP2911W Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2911W, P-Channel enhancement mode -20V/-4.5A,RDS(ON)=96m @VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-3.8A,RDS(ON)=128m @VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.5A,RDS(ON)=180m @VGS=-1.8V These devices are particularly suited fo... See More ⇒
afp2913w.pdf
AFP2913W Alfa-MOS 25V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2913W, P-Channel enhancement mode -25V/-4.5A,RDS(ON)=120m @VGS=-10V MOSFET, uses Advanced Trench Technology -25V/-3.8A,RDS(ON)=155m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s... See More ⇒
Detailed specifications: AFP2323A, AFP2333A, AFP2337A, AFP2341, AFP2343A, AFP2367AS, AFP2367S, AFP2379, 50N06, AFP2913W, AFP3050S, AFP3401AS, AFP3401S, AFP3403, AFP3403A, AFP3405, AFP3407AS
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