All MOSFET. AFP2911W Datasheet

 

AFP2911W Datasheet and Replacement


   Type Designator: AFP2911W
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.096 Ohm
   Package: DFN2X2-6L
 

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AFP2911W Datasheet (PDF)

 ..1. Size:769K  alfa-mos
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AFP2911W

AFP2911W Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2911W, P-Channel enhancement mode -20V/-4.5A,RDS(ON)=96m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-3.8A,RDS(ON)=128m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.5A,RDS(ON)=180m@VGS=-1.8V These devices are particularly suited fo

 8.1. Size:640K  alfa-mos
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AFP2911W

AFP2913W Alfa-MOS 25V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP2913W, P-Channel enhancement mode -25V/-4.5A,RDS(ON)=120m@VGS=-10V MOSFET, uses Advanced Trench Technology -25V/-3.8A,RDS(ON)=155m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

Datasheet: AFP2323A , AFP2333A , AFP2337A , AFP2341 , AFP2343A , AFP2367AS , AFP2367S , AFP2379 , 50N06 , AFP2913W , AFP3050S , AFP3401AS , AFP3401S , AFP3403 , AFP3403A , AFP3405 , AFP3407AS .

History: NCE70N290K | DMG8880LSS | C3M0065100K | CS65N20-30 | IXFV110N10P | IPB120N08S4-03 | SQM90142E

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