All MOSFET. AFP3050S Datasheet

 

AFP3050S Datasheet and Replacement


   Type Designator: AFP3050S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: TO-252
 

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AFP3050S Datasheet (PDF)

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AFP3050S

AFP3050S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3050S, P-Channel enhancement mode -30V/-9A,RDS(ON)=60m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-7A,RDS(ON)=72m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-5A,RDS(ON)=108m@VGS=-2.5V These devices are particularly suited for low

Datasheet: AFP2337A , AFP2341 , AFP2343A , AFP2367AS , AFP2367S , AFP2379 , AFP2911W , AFP2913W , IRFZ44 , AFP3401AS , AFP3401S , AFP3403 , AFP3403A , AFP3405 , AFP3407AS , AFP3407S , AFP3411 .

History: HM3018JR | 2SK2527-01MR | S70N06RN | QM6008P | TSF10N65M | IXTH1N200P3HV | BSC025N03LSG

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