AFP3050S Datasheet. Specs and Replacement
Type Designator: AFP3050S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
Package: TO-252
📄📄 Copy
AFP3050S substitution
- MOSFET ⓘ Cross-Reference Search
AFP3050S datasheet
afp3050s.pdf
AFP3050S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3050S, P-Channel enhancement mode -30V/-9A,RDS(ON)=60m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-7A,RDS(ON)=72m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-5A,RDS(ON)=108m @VGS=-2.5V These devices are particularly suited for low ... See More ⇒
Detailed specifications: AFP2337A, AFP2341, AFP2343A, AFP2367AS, AFP2367S, AFP2379, AFP2911W, AFP2913W, IRFZ44, AFP3401AS, AFP3401S, AFP3403, AFP3403A, AFP3405, AFP3407AS, AFP3407S, AFP3411
Keywords - AFP3050S MOSFET specs
AFP3050S cross reference
AFP3050S equivalent finder
AFP3050S pdf lookup
AFP3050S substitution
AFP3050S replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
