All MOSFET. AFP3407S Datasheet

 

AFP3407S Datasheet and Replacement


   Type Designator: AFP3407S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SOT-23
 

 AFP3407S substitution

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AFP3407S Datasheet (PDF)

 ..1. Size:530K  alfa-mos
 afp3407s.pdf pdf_icon

AFP3407S

AFP3407S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3407S, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=75m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=95m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 7.1. Size:662K  alfa-mos
 afp3407as.pdf pdf_icon

AFP3407S

AFP3407AS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3407AS, P-Channel enhancement mode -30V/-2.8A,RDS(ON)=77m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-2.4A,RDS(ON)=102m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularl

 8.1. Size:462K  alfa-mos
 afp3405.pdf pdf_icon

AFP3407S

AFP3405 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3405, P-Channel enhancement mode -30V/-4.0A,RDS(ON)=40m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-2.8A,RDS(ON)=50m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite

 8.2. Size:766K  alfa-mos
 afp3401as.pdf pdf_icon

AFP3407S

AFP3401AS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3401AS, P-Channel enhancement mode -30V/-2.4 RDS(ON)=70@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-1.8 RDS(ON)=80@VGS=-4.5V to provide excellent RDS(ON), low gate charge. -30V/-1.2 RDS(ON)=105@VGS=-2.5V These devices are particularly suited for lo

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Datasheet: AFP2913W , AFP3050S , AFP3401AS , AFP3401S , AFP3403 , AFP3403A , AFP3405 , AFP3407AS , AO3400 , AFP3411 , AFP3413 , AFP3413A , AFP3415 , AFP3425 , AFP3459 , AFP3481S , AFP3485 .

Keywords - AFP3407S MOSFET datasheet

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