All MOSFET. AFP3981 Datasheet

 

AFP3981 Datasheet and Replacement


   Type Designator: AFP3981
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 223 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TSOP-6
 

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AFP3981 Datasheet (PDF)

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AFP3981

AFP3981 Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3981, P-Channel enhancement mode -20V/-3.2A,RDS(ON)=100m@VGS=-4.5V MOSFET, uses Advanced Trench Technology -20V/-2.4A,RDS(ON)=135m@VGS=-2.5V to provide excellent RDS(ON), low gate charge. -20V/-1.5A,RDS(ON)=190m@VGS=-1.8V These devices are particularly suited for

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AFP3981

AFP3993 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP3993, P-Channel enhancement mode -30V/-3.6A,RDS(ON)=150m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-3.2A,RDS(ON)=235m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

Datasheet: AFP3415 , AFP3425 , AFP3459 , AFP3481S , AFP3485 , AFP3497 , AFP3679S , AFP3804 , IRF9540 , AFP3993 , AFP4403 , AFP4435 , AFP4435S , AFP4435W , AFP4435WS , AFP4447 , AFP4535 .

History: CJP04N60A

Keywords - AFP3981 MOSFET datasheet

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