AFP4637W Datasheet and Replacement
Type Designator: AFP4637W
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 145 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
Package: SOP-8P
AFP4637W substitution
AFP4637W Datasheet (PDF)
afp4637w.pdf

AFP4637W Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4637W, P-Channel enhancement mode -40V/-6.8A,RDS(ON)= 37m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-5.8A,RDS(ON)= 54m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
afp4637.pdf

AFP4637 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4637, P-Channel enhancement mode -40V/-6.8A,RDS(ON)= 37m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-5.8A,RDS(ON)= 54m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
Datasheet: AFP4435S , AFP4435W , AFP4435WS , AFP4447 , AFP4535 , AFP4535W , AFP4599W , AFP4637 , AON7410 , AFP4925 , AFP4925S , AFP4925W , AFP4925WS , AFP4943WS , AFP4948 , AFP4953S , AFP4953WS .
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