AFP4637W Datasheet and Replacement
Type Designator: AFP4637W
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 6.8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 145 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
Package: SOP-8P
- MOSFET Cross-Reference Search
AFP4637W Datasheet (PDF)
afp4637w.pdf

AFP4637W Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4637W, P-Channel enhancement mode -40V/-6.8A,RDS(ON)= 37m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-5.8A,RDS(ON)= 54m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
afp4637.pdf

AFP4637 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP4637, P-Channel enhancement mode -40V/-6.8A,RDS(ON)= 37m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-5.8A,RDS(ON)= 54m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: SM6A12NSFP | FCPF7N60YDTU
Keywords - AFP4637W MOSFET datasheet
AFP4637W cross reference
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History: SM6A12NSFP | FCPF7N60YDTU



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