AFP6459 Datasheet. Specs and Replacement
Type Designator: AFP6459 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.102 Ohm
Package: TSSOP-8P
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AFP6459 substitution
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AFP6459 datasheet
afp6459.pdf
AFP6459 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP6459, P-Channel enhancement mode -60V/-5.4A,RDS(ON)=102m @VGS=10V MOSFET, uses Advanced Trench Technology -60V/-4.0A,RDS(ON)=115m @VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite... See More ⇒
afp6405s.pdf
AFP6405S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP6405S, P-Channel enhancement mode -30V/-5.0A,RDS(ON)=72m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-4.0A,RDS(ON)=92m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s... See More ⇒
afp6405ws.pdf
AFP6405WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP6405WS, P-Channel enhancement mode -30V/-5.0A,RDS(ON)=56m @VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-4.0A,RDS(ON)=86m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly... See More ⇒
Detailed specifications: AFP4925W, AFP4925WS, AFP4943WS, AFP4948, AFP4953S, AFP4953WS, AFP6405S, AFP6405WS, CS150N03A8, AFP6801, AFP6993, AFP7617WS, AFP8206, AFP8451, AFP8452, AFP8463, AFP8473
Keywords - AFP6459 MOSFET specs
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