AFP6459 Datasheet and Replacement
Type Designator: AFP6459
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.102 Ohm
Package: TSSOP-8P
AFP6459 substitution
AFP6459 Datasheet (PDF)
afp6459.pdf
AFP6459 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP6459, P-Channel enhancement mode -60V/-5.4A,RDS(ON)=102m@VGS=10V MOSFET, uses Advanced Trench Technology -60V/-4.0A,RDS(ON)=115m@VGS=4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suite
afp6405s.pdf
AFP6405S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP6405S, P-Channel enhancement mode -30V/-5.0A,RDS(ON)=72m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-4.0A,RDS(ON)=92m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
afp6405ws.pdf
AFP6405WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP6405WS, P-Channel enhancement mode -30V/-5.0A,RDS(ON)=56m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-4.0A,RDS(ON)=86m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
Datasheet: AFP4925W , AFP4925WS , AFP4943WS , AFP4948 , AFP4953S , AFP4953WS , AFP6405S , AFP6405WS , CS150N03A8 , AFP6801 , AFP6993 , AFP7617WS , AFP8206 , AFP8451 , AFP8452 , AFP8463 , AFP8473 .
Keywords - AFP6459 MOSFET datasheet
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