All MOSFET. AFP8463 Datasheet

 

AFP8463 MOSFET. Datasheet pdf. Equivalent


   Type Designator: AFP8463
   Marking Code: 8463
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: SOT-223

 AFP8463 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AFP8463 Datasheet (PDF)

 ..1. Size:797K  alfa-mos
 afp8463.pdf

AFP8463 AFP8463

AFP8463 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8463, P-Channel enhancement mode -40V/-6.0A,RDS(ON)= 46m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-4.2A,RDS(ON)= 62m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

 9.1. Size:537K  alfa-mos
 afp8452.pdf

AFP8463 AFP8463

AFP8452 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8452, P-Channel enhancement mode -30V/-5.0A,RDS(ON)=70m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=90m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

 9.2. Size:493K  alfa-mos
 afp8483.pdf

AFP8463 AFP8463

AFP8483 Alfa-MOS 100V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8483, P-Channel enhancement mode -100V/-3.8A,RDS(ON)= 260m@VGS= -10V MOSFET, uses Advanced Trench Technology -100V/-2.6A,RDS(ON)= 290m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particula

 9.3. Size:567K  alfa-mos
 afp8451.pdf

AFP8463 AFP8463

AFP8451 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8451, P-Channel enhancement mode -60V/-3.0A,RDS(ON)=305m@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-2.0A,RDS(ON)=330m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

 9.4. Size:574K  alfa-mos
 afp8473.pdf

AFP8463 AFP8463

AFP8473 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8473, P-Channel enhancement mode -60V/-4.8A,RDS(ON)= 135m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3.6A,RDS(ON)= 155m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: J105

 

 
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