AFP8463 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AFP8463
Маркировка: 8463
Тип транзистора: MOSFET
Полярность: P
Максимальная рассеиваемая мощность (Pd): 2.8 W
Предельно допустимое напряжение сток-исток |Uds|: 40 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 6 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 13 nC
Время нарастания (tr): 55 ns
Выходная емкость (Cd): 145 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.046 Ohm
Тип корпуса: SOT-223
AFP8463 Datasheet (PDF)
afp8463.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AFP8463 Alfa-MOS 40V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8463, P-Channel enhancement mode -40V/-6.0A,RDS(ON)= 46m@VGS= -10V MOSFET, uses Advanced Trench Technology -40V/-4.2A,RDS(ON)= 62m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s
afp8452.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AFP8452 Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8452, P-Channel enhancement mode -30V/-5.0A,RDS(ON)=70m@VGS=-10.0V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=90m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui
afp8483.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AFP8483 Alfa-MOS 100V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8483, P-Channel enhancement mode -100V/-3.8A,RDS(ON)= 260m@VGS= -10V MOSFET, uses Advanced Trench Technology -100V/-2.6A,RDS(ON)= 290m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particula
afp8451.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AFP8451 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8451, P-Channel enhancement mode -60V/-3.0A,RDS(ON)=305m@VGS=-10V MOSFET, uses Advanced Trench Technology -60V/-2.0A,RDS(ON)=330m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui
afp8473.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
AFP8473 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP8473, P-Channel enhancement mode -60V/-4.8A,RDS(ON)= 135m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3.6A,RDS(ON)= 155m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![AFP8463](https://alltransistors.com/images/us.png)
![AFP8463](https://alltransistors.com/images/es.png)
![AFP8463](https://alltransistors.com/images/ru.png)
Список транзисторов
Обновления
MOSFET: BSS123K2 | BRU26N50 | BRU24N50 | BRI7N65 | BRI7N60 | BRI740 | BRI65R380C | BRI5N65 | BRI50N06 | BRI4N70 | BRI2N70 | BRGN250N65YK | BRFL8N65 | BRFL7N65S | BRFL70R360C | BRFL65R380C