AFP9407 Datasheet. Specs and Replacement

Type Designator: AFP9407  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOP-8P

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AFP9407 datasheet

 ..1. Size:495K  alfa-mos
 afp9407.pdf pdf_icon

AFP9407

AFP9407 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9407, P-Channel enhancement mode -60V/-4.6A,RDS(ON)= 100m @VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3.8A,RDS(ON)= 120m @VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly... See More ⇒

 9.1. Size:559K  alfa-mos
 afp9434ws.pdf pdf_icon

AFP9407

AFP9434WS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9434WS, P-Channel enhancement mode -20V/-6.5A,RDS(ON)=42m @VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-4.5A,RDS(ON)=58m @VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.5A,RDS(ON)=72m @VGS=1.8V These devices are particularly suited for l... See More ⇒

 9.2. Size:593K  alfa-mos
 afp9435ws.pdf pdf_icon

AFP9407

AFP9435WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9435WS, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=58m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=78m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s... See More ⇒

 9.3. Size:593K  alfa-mos
 afp9435s.pdf pdf_icon

AFP9407

AFP9435S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9435S, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=52m @VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=76m @VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui... See More ⇒

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Detailed specifications: AFP8483, AFP8803, AFP8823, AFP8833, AFP8931, AFP8943, AFP8989, AFP8995, 18N50, AFP9434WS, AFP9435S, AFP9435WS, AFP9510S, AFP9565S, AFP9566W, AFP9575S, AFP9576

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