AFP9407 - параметры транзистора MOSFET, его аналоги, datasheet

AFP9407 Datasheet (PDF)

..1. Size:495K alfa-mos
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AFP9407 Alfa-MOS 60V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9407, P-Channel enhancement mode -60V/-4.6A,RDS(ON)= 100m@VGS= -10V MOSFET, uses Advanced Trench Technology -60V/-3.8A,RDS(ON)= 120m@VGS= -4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly

9.1. Size:559K alfa-mos
afp9434ws.pdf pdf_icon

AFP9434WS Alfa-MOS 20V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9434WS, P-Channel enhancement mode -20V/-6.5A,RDS(ON)=42m@VGS=4.5V MOSFET, uses Advanced Trench Technology -20V/-4.5A,RDS(ON)=58m@VGS=2.5V to provide excellent RDS(ON), low gate charge. -20V/-2.5A,RDS(ON)=72m@VGS=1.8V These devices are particularly suited for l

9.2. Size:593K alfa-mos
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AFP9435WS Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9435WS, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=58m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=78m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly s

9.3. Size:593K alfa-mos
afp9435s.pdf pdf_icon

AFP9435S Alfa-MOS 30V P-Channel Technology Enhancement Mode MOSFET General Description Features AFP9435S, P-Channel enhancement mode -30V/-5.3A,RDS(ON)=52m@VGS=-10V MOSFET, uses Advanced Trench Technology -30V/-4.2A,RDS(ON)=76m@VGS=-4.5V to provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly sui

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