IRFB18N50KPBF Datasheet. Specs and Replacement

Type Designator: IRFB18N50KPBF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: TO-220

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IRFB18N50KPBF substitution

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IRFB18N50KPBF datasheet

 ..1. Size:177K  international rectifier
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IRFB18N50KPBF

SMPS MOSFET PD - 95472A IRFB18N50KPbF HEXFET Power MOSFET Applications l Switch Mode Power Supply (SMPS) VDSS RDS(on) typ. ID l Uninterruptible Power Supply 500V 0.26 17A l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamicdv/dt Ruggedness ... See More ⇒

 4.1. Size:83K  international rectifier
irfb18n50k.pdf pdf_icon

IRFB18N50KPBF

PD - 93926B IRFB18N50K SMPS MOSFET HEXFET Power MOSFET Applications VDSS RDS(on) typ. ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.26 17A High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized ... See More ⇒

 4.2. Size:168K  vishay
irfb18n50k.pdf pdf_icon

IRFB18N50KPBF

IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.26 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 34 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 54 and Current Con... See More ⇒

 4.3. Size:223K  vishay
irfb18n50k sihfb18n50k.pdf pdf_icon

IRFB18N50KPBF

IRFB18N50K, SiHFB18N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.26 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 34 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 54 and Current Con... See More ⇒

Detailed specifications: IRFB16N60LPBF, IRFB17N20D, IRFB17N20DPBF, IRFB17N50L, IRFB17N50LPBF, IRFB17N60K, IRFB17N60KPBF, IRFB18N50K, IRF640N, IRFB20N50K, IRFB20N50KPBF, IRFB23N15DPBF, IRFB23N20DPBF, IRFB260NPBF, IRFB3004GPBF, IRFB3004PBF, IRFB3006GPBF

Keywords - IRFB18N50KPBF MOSFET specs

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