IRFB4020PBF Datasheet. Specs and Replacement
Type Designator: IRFB4020PBF 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 91 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO-220AB
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IRFB4020PBF substitution
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IRFB4020PBF datasheet
irfb4020pbf.pdf
PD - 97195 DIGITAL AUDIO MOSFET IRFB4020PbF Features Key Parameters Key parameters optimized for Class-D audio VDS 200 V amplifier applications RDS(ON) typ. @ 10V m 80 Low RDSON for improved efficiency Qg typ. 18 nC Qsw typ. 6.7 nC Low QG and QSW for better THD and improved RG(int) typ. 3.2 efficiency TJ max 175 C Low QRR for better THD and lower EM... See More ⇒
irfb4020.pdf
isc N-Channel MOSFET Transistor IRFB4020 IIRFB4020 FEATURES Static drain-source on-resistance RDS(on) 100m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and repetitive avalanche capability ABSOLUTE MAXIMUM RATING... See More ⇒
irfb4019.pdf
isc N-Channel MOSFET Transistor IRFB4019 IIRFB4019 FEATURES Static drain-source on-resistance RDS(on) 95m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION 175 operating junction temperature and repetitive avalanche capability ABSOLUTE MAXIMUM RATINGS... See More ⇒
Detailed specifications: IRFB33N15DPBF, IRFB3407ZPBF, IRFB3507PBF, IRFB3607GPBF, IRFB3607PBF, IRFB3806PBF, IRFB38N20DPBF, IRFB4019PBF, 20N50, IRFB4110GPBF, IRFB4110PBF, IRFB4115GPBF, IRFB4115PBF, IRFB4127PBF, IRFB4137PBF, IRFB41N15DPBF, IRFB4212PBF
Keywords - IRFB4020PBF MOSFET specs
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History: IRFP4768PBF
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