All MOSFET. IRLW540A Datasheet

 

IRLW540A MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRLW540A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 121 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 28 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 38.4 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 310 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: TO263

 IRLW540A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRLW540A Datasheet (PDF)

 ..1. Size:344K  1
 irli540a irlw540a.pdf

IRLW540A IRLW540A

 ..2. Size:960K  samsung
 irlw540a.pdf

IRLW540A IRLW540A

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.058 Rugged Gate Oxide Technology Lower Input CapacitanceID = 28 A Improved Gate Charge Extended Safe Operating AreaoC 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.046 (Typ.) 112331. Gate 2. Drain 3. SourceAb

 9.1. Size:166K  1
 irli530a irlw530a.pdf

IRLW540A IRLW540A

 9.2. Size:165K  1
 irli520a irlw520a.pdf

IRLW540A IRLW540A

 9.3. Size:260K  fairchild semi
 irlw510a irli510a.pdf

IRLW540A IRLW540A

IRLW/I510AFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.6 A Improved Gate Charge Extended Safe Operating AreaD2-PAK I2-PAK 175C Operating Temperature2 Lower Leakage Current: 10A (Max.) @ VDS = 100V Lower RDS(ON): 0.336 (Typ.)112331. Gate 2. Drai

 9.4. Size:905K  samsung
 irlw520a.pdf

IRLW540A IRLW540A

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.22 Rugged Gate Oxide Technology Lower Input CapacitanceID = 9.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.176 (Typ.)112331. Gate 2. Drain 3. SourceAbsol

 9.5. Size:950K  samsung
 irlw530a.pdf

IRLW540A IRLW540A

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.12 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.101 (Typ.) 112331. Gate 2. Drain 3. SourceAbsolute

 9.6. Size:813K  samsung
 irlw510a.pdf

IRLW540A IRLW540A

Advanced Power MOSFETFEATURESBVDSS = 100 V Avalanche Rugged TechnologyRDS(on) = 0.44 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.6 A Improved Gate Charge Extended Safe Operating AreaoC 175 Operating Temperature2 Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.336 (Typ.)112331. Gate 2. Drain 3. Source

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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