All MOSFET. AM10N30-600I Datasheet

 

AM10N30-600I Datasheet and Replacement


   Type Designator: AM10N30-600I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 60 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO-251
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AM10N30-600I Datasheet (PDF)

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AM10N30-600I

Analog Power AM10N30-600IN-Channel 300-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) (m) ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 600 @ VGS = 10V 7.5converters and power management in portable and 300900 @ VGS = 5.5V 6.1

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF242 | HLML6401 | CS27P06 | IPB60R045P7 | HU60P03 | SM6A08NSU | AP85T03GH-HF

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