AM10N30-600I Datasheet. Specs and Replacement

Type Designator: AM10N30-600I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO-251

AM10N30-600I substitution

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AM10N30-600I datasheet

 ..1. Size:70K  analog power
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AM10N30-600I

Analog Power AM10N30-600I N-Channel 300-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a PRODUCT SUMMARY high cell density trench process to provide low VDS (V) rDS(on) (m ) ID (A) rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 600 @ VGS = 10V 7.5 converters and power management in portable and 300 900 @ VGS = 5.5V 6.1... See More ⇒

Detailed specifications: IRFBC20PBF, IRFBC30AL, IRFBC30ALPBF, IRFBC30APBF, IRFBC30ASPBF, IRFBC30LPBF, IRFBC30PBF, IRFBC30SPBF, IRFP064N, AM10P10-530D, AM10P10-530I, AM10P15-550D, AM10P20-1400D, AM10P20-690D, AM110N06-08P, AM110P06-06B, AM110P08-11B

Keywords - AM10N30-600I MOSFET specs

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