All MOSFET. AM10N30-600I Datasheet

 

AM10N30-600I Datasheet and Replacement


   Type Designator: AM10N30-600I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 19 nC
   tr ⓘ - Rise Time: 60 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO-251
 

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AM10N30-600I Datasheet (PDF)

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AM10N30-600I

Analog Power AM10N30-600IN-Channel 300-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) (m) ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 600 @ VGS = 10V 7.5converters and power management in portable and 300900 @ VGS = 5.5V 6.1

Datasheet: IRFBC20PBF , IRFBC30AL , IRFBC30ALPBF , IRFBC30APBF , IRFBC30ASPBF , IRFBC30LPBF , IRFBC30PBF , IRFBC30SPBF , 5N50 , AM10P10-530D , AM10P10-530I , AM10P15-550D , AM10P20-1400D , AM10P20-690D , AM110N06-08P , AM110P06-06B , AM110P08-11B .

History: BUK454-200B | NVATS5A302PLZ | CPC3703C | IPP80N06S2L-07 | GSM4535 | TSM240N03CX | STH110N10F7-2

Keywords - AM10N30-600I MOSFET datasheet

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