All MOSFET. AM12N65P Datasheet

 

AM12N65P Datasheet and Replacement


   Type Designator: AM12N65P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 165 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220AB
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AM12N65P Datasheet (PDF)

 ..1. Size:287K  analog power
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AM12N65P

Analog Power AM12N65PN-Channel 650-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)800 @ VGS = 10V Low thermal impedance 65012a850 @ VGS = 6V Fast switching speed Typical Applications: White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion Circuits

 0.1. Size:271K  analog power
 am12n65pcfm.pdf pdf_icon

AM12N65P

Analog Power AM12N65PCFMN-Channel 650-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)800 @ VGS = 10V7 Low thermal impedance 650850 @ VGS = 6V6.5 Fast switching speed Typical Applications: Power Supplies Motor Drives Consumer Electronics ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTH

Datasheet: AM10P10-530D , AM10P10-530I , AM10P15-550D , AM10P20-1400D , AM10P20-690D , AM110N06-08P , AM110P06-06B , AM110P08-11B , IRF540N , AM12N65PCFM , AM1320N , AM1321P , AM1323P , AM1330N , AM1331P , AM1340N , AM1360NE .

History: SSM03N70GP-H | SFF9230Z | TK20V60W | SI2308 | FQA9N90CF109 | IRFB3006G | STP9NB50FP

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