AM1360NE Specs and Replacement

Type Designator: AM1360NE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.34 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: SC-70

AM1360NE substitution

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AM1360NE datasheet

 ..1. Size:114K  analog power
 am1360ne.pdf pdf_icon

AM1360NE

Analog Power AM1360NE N-Channel 60V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC VDS (V) rDS(on) ( ) ID (A) converters and power management in portable and 3 @ VGS = 10 V 0.3 battery-powered products such as ... See More ⇒

Detailed specifications: AM12N65P, AM12N65PCFM, AM1320N, AM1321P, AM1323P, AM1330N, AM1331P, AM1340N, IRF640N, AM1370N, AM1400NE, AM1420N, AM1421P, AM1430N, AM1431P, AM1432NE, AM1433PE

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