All MOSFET. AM1360NE Datasheet

 

AM1360NE Datasheet and Replacement


   Type Designator: AM1360NE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: SC-70
 

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AM1360NE Datasheet (PDF)

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AM1360NE

Analog Power AM1360NEN-Channel 60V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC VDS (V) rDS(on) () ID (A)converters and power management in portable and 3 @ VGS = 10 V 0.3battery-powered products such as

Datasheet: AM12N65P , AM12N65PCFM , AM1320N , AM1321P , AM1323P , AM1330N , AM1331P , AM1340N , IRFP260N , AM1370N , AM1400NE , AM1420N , AM1421P , AM1430N , AM1431P , AM1432NE , AM1433PE .

History: STB80N20M5 | SUP85N10-10P | AP3P050H | AOWF9N70 | SVSP60R090FJDHD4 | TK10A60W | BUK138-50DL

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