AM1360NE MOSFET. Datasheet pdf. Equivalent
Type Designator: AM1360NE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 0.3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 4 nC
trⓘ - Rise Time: 4 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: SC-70
AM1360NE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM1360NE Datasheet (PDF)
..1. Size:114K analog power
am1360ne.pdf
am1360ne.pdf
Analog Power AM1360NEN-Channel 60V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC VDS (V) rDS(on) () ID (A)converters and power management in portable and 3 @ VGS = 10 V 0.3battery-powered products such as
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