AM1370N Datasheet and Replacement
Type Designator: AM1370N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 180 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.39 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 12 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: SC-70
AM1370N substitution
AM1370N Datasheet (PDF)
am1370n.pdf

Analog Power AM1370NN-Channel 180-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)1500 @ VGS = 10V0.39 Low thermal impedance 1801600 @ VGS = 4.5V0.38 Fast switching speed Typical Applications: SC70-3 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits
Datasheet: AM12N65PCFM , AM1320N , AM1321P , AM1323P , AM1330N , AM1331P , AM1340N , AM1360NE , 10N60 , AM1400NE , AM1420N , AM1421P , AM1430N , AM1431P , AM1432NE , AM1433PE , AM1434N .
History: HM100N15 | MTP12N08L | IRLML6302TRPBF | RAL035P01 | ME3449D-G | WMM80R1K0S | IPG20N06S4L-11A
Keywords - AM1370N MOSFET datasheet
AM1370N cross reference
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History: HM100N15 | MTP12N08L | IRLML6302TRPBF | RAL035P01 | ME3449D-G | WMM80R1K0S | IPG20N06S4L-11A



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