All MOSFET. AM1922NE Datasheet

 

AM1922NE Datasheet and Replacement


   Type Designator: AM1922NE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 1.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 14 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.088 Ohm
   Package: SC-70
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AM1922NE Datasheet (PDF)

 ..1. Size:93K  analog power
 am1922ne.pdf pdf_icon

AM1922NE

Analog Power AM1922NEN-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) (m) ID (A)rDS(on) and to ensure minimal power loss and heat 88 @ VGS = 4.5V 1.6dissipation. Typical applications are DC-DC 20converters and power management in portable and 120 @ VGS = 2.5V 1.3batt

 9.1. Size:408K  analog power
 am1925pe.pdf pdf_icon

AM1922NE

Analog Power AM1925PEP-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)160 @ VGS = -4.5V -1.2 Low thermal impedance -20210 @ VGS = -2.5V -1.1 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MA

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History: SI3457CDV | HLML6401 | AUIRLR3705Z | IRFB3207ZG | AOD4128 | NCE30H10BG | AP85T03GH-HF

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