All MOSFET. AM1960NE Datasheet

 

AM1960NE MOSFET. Datasheet pdf. Equivalent


   Type Designator: AM1960NE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.32 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 11 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm
   Package: SC-70

 AM1960NE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM1960NE Datasheet (PDF)

 ..1. Size:289K  analog power
 am1960ne.pdf

AM1960NE AM1960NE

Analog Power AM1960NEDual N-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) ()VDS (V) ID (A) Low r trench technology DS(on)2 @ VGS = 10V0.32 Low thermal impedance 603 @ VGS = 4.5V0.26 Fast switching speed Typical Applications: DC/DC Conversion Circuits Motor Drives ABSOLUTE MAXIMUM RATINGS (TA = 25C UNLESS OTHERWISE NOTED)

 9.1. Size:305K  analog power
 am1963pe.pdf

AM1960NE AM1960NE

Analog Power AM1963PEDual P-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)700 @ VGS = -10V -0.57 Low thermal impedance -60860 @ VGS = -4.5V -0.52 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSO

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History: STH65N06FI | 2SK1285

 

 
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