IRFD012 Specs and Replacement

Type Designator: IRFD012

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: DIP-4

IRFD012 substitution

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IRFD012 datasheet

 ..1. Size:439K  international rectifier
 irfd010 irfd012.pdf pdf_icon

IRFD012

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 8.1. Size:1360K  international rectifier
 irfd014pbf.pdf pdf_icon

IRFD012

PD- 95920 IRFD014PbF Lead-Free 10/27/04 Document Number 91125 www.vishay.com 1 IRFD014PbF Document Number 91125 www.vishay.com 2 IRFD014PbF Document Number 91125 www.vishay.com 3 IRFD014PbF Document Number 91125 www.vishay.com 4 IRFD014PbF Document Number 91125 www.vishay.com 5 IRFD014PbF Document Number 91125 www.vishay.com 6 IRFD014PbF Peak Diode Recovery... See More ⇒

 8.2. Size:171K  international rectifier
 irfd014.pdf pdf_icon

IRFD012

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 8.3. Size:2019K  vishay
 irfd014 sihfd014.pdf pdf_icon

IRFD012

IRFD014, SiHFD014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 60 Available For Automatic Insertion RDS(on) ( )VGS = 10 V 0.20 RoHS* End Stackable Qg (Max.) (nC) 11 COMPLIANT 175 C Operating Temperature Qgs (nC) 3.1 Qgd (nC) 5.8 Fast Switching Configuration Single Ease of Paralleling Simple Drive Requireme... See More ⇒

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Detailed specifications: IRFBF20PBF, IRFBF20SPBF, IRFBF30PBF, IRFBF30S, IRFBF30SPBF, IRFBG20PBF, IRFBG30PBF, IRFD010, IRF1407, IRFD014PBF, IRFD020, IRFD020PBF, IRFD024PBF, IRFD110PBF, IRFD113PBF, IRFD120PBF, IRFD123PBF

Keywords - IRFD012 MOSFET specs

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