IRFD012 Datasheet and Replacement
Type Designator: IRFD012
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 1.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 8.8 nC
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: DIP-4
IRFD012 substitution
IRFD012 Datasheet (PDF)
irfd014pbf.pdf
PD- 95920IRFD014PbF Lead-Free10/27/04Document Number: 91125 www.vishay.com1IRFD014PbFDocument Number: 91125 www.vishay.com2IRFD014PbFDocument Number: 91125 www.vishay.com3IRFD014PbFDocument Number: 91125 www.vishay.com4IRFD014PbFDocument Number: 91125 www.vishay.com5IRFD014PbFDocument Number: 91125 www.vishay.com6IRFD014PbFPeak Diode Recovery
irfd014 sihfd014.pdf
IRFD014, SiHFD014Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 60Available For Automatic InsertionRDS(on) ()VGS = 10 V 0.20RoHS* End StackableQg (Max.) (nC) 11COMPLIANT 175 C Operating TemperatureQgs (nC) 3.1Qgd (nC) 5.8 Fast SwitchingConfiguration Single Ease of Paralleling Simple Drive Requireme
Datasheet: IRFBF20PBF , IRFBF20SPBF , IRFBF30PBF , IRFBF30S , IRFBF30SPBF , IRFBG20PBF , IRFBG30PBF , IRFD010 , P0903BDG , IRFD014PBF , IRFD020 , IRFD020PBF , IRFD024PBF , IRFD110PBF , IRFD113PBF , IRFD120PBF , IRFD123PBF .
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