IRFD9113 Datasheet and Replacement
Type Designator: IRFD9113
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm
Package: DIP-4
IRFD9113 substitution
IRFD9113 Datasheet (PDF)
irfd9110pbf.pdf
PD- 95921IRFD9110PbF Lead-Free10/28/04Document Number: 91138 www.vishay.com1IRFD9110PbFDocument Number: 91138 www.vishay.com2IRFD9110PbFDocument Number: 91138 www.vishay.com3IRFD9110PbFDocument Number: 91138 www.vishay.com4IRFD9110PbFDocument Number: 91138 www.vishay.com5IRFD9110PbFDocument Number: 91138 www.vishay.com6IRFD9110PbFPeak Diode R
irfd9110 sihfd9110.pdf
IRFD9110, SiHFD9110Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* For Automatic InsertionQg (Max.) (nC) 8.7 COMPLIANT End StackableQgs (nC) 2.2 P-ChannelQgd (nC) 4.1 175 C Operating TemperatureConfiguration Single Fast Switchin
Datasheet: IRFD420PBF , IRFD9010 , IRFD9012 , IRFD9010PBF , IRFD9014PBF , IRFD9020PBF , IRFD9024PBF , IRFD9110PBF , STP65NF06 , IRFD9120PBF , IRFD9210PBF , IRFD9220PBF , IRFDC20PBF , IRFEA240 , IRFF034 , IRFF212 , IRFF213 .
History: 4N60KG-TN3-R | SQ9407EY
Keywords - IRFD9113 MOSFET datasheet
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History: 4N60KG-TN3-R | SQ9407EY
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