All MOSFET. IRFEA240 Datasheet

 

IRFEA240 Datasheet and Replacement


   Type Designator: IRFEA240
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 196 nS
   Cossⓘ - Output Capacitance: 434 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: LCC28
 

 IRFEA240 substitution

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IRFEA240 Datasheet (PDF)

 ..1. Size:177K  international rectifier
 irfea240.pdf pdf_icon

IRFEA240

PD - 93978HEXFET POWER MOSFET IRFEA240SURFACE MOUNT (LCC-28) 200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFEA240 200V 0.18 11AFifth Generation HEXFET power MOSFETs fromLCC-28International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:fast sw

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