All MOSFET. IRFEA240 Datasheet

 

IRFEA240 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFEA240
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 84 nC
   trⓘ - Rise Time: 196 nS
   Cossⓘ - Output Capacitance: 434 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: LCC28

 IRFEA240 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFEA240 Datasheet (PDF)

 ..1. Size:177K  international rectifier
 irfea240.pdf

IRFEA240 IRFEA240

PD - 93978HEXFET POWER MOSFET IRFEA240SURFACE MOUNT (LCC-28) 200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFEA240 200V 0.18 11AFifth Generation HEXFET power MOSFETs fromLCC-28International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:fast sw

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDMS7658AS

 

 
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