IRFEA240 Datasheet and Replacement
Type Designator: IRFEA240
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 196 nS
Cossⓘ - Output Capacitance: 434 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: LCC28
IRFEA240 substitution
IRFEA240 Datasheet (PDF)
irfea240.pdf
PD - 93978HEXFET POWER MOSFET IRFEA240SURFACE MOUNT (LCC-28) 200V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRFEA240 200V 0.18 11AFifth Generation HEXFET power MOSFETs fromLCC-28International Rectifier utilize advanced processingtechniques to achieve the lowest possible on-resistanceper silicon unit area. This benefit, combined with theFeatures:fast sw
Datasheet: IRFD9020PBF , IRFD9024PBF , IRFD9110PBF , IRFD9113 , IRFD9120PBF , IRFD9210PBF , IRFD9220PBF , IRFDC20PBF , AON7403 , IRFF034 , IRFF212 , IRFF213 , IRFF30B , IRFF30C , IRFF640 , IRFG110 , IRFG5110 .
History: JMSL0403AG | ME7648S | GSM2319AS | JMSL0406AKQ | AM60N03-09D
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: JMSL0403AG | ME7648S | GSM2319AS | JMSL0406AKQ | AM60N03-09D
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