IRFEA240 Specs and Replacement

Type Designator: IRFEA240

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 196 nS

Cossⓘ - Output Capacitance: 434 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: LCC28

IRFEA240 substitution

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IRFEA240 datasheet

 ..1. Size:177K  international rectifier
 irfea240.pdf pdf_icon

IRFEA240

PD - 93978 HEXFET POWER MOSFET IRFEA240 SURFACE MOUNT (LCC-28) 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRFEA240 200V 0.18 11A Fifth Generation HEXFET power MOSFETs from LCC-28 International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon unit area. This benefit, combined with the Features fast sw... See More ⇒

Detailed specifications: IRFD9020PBF, IRFD9024PBF, IRFD9110PBF, IRFD9113, IRFD9120PBF, IRFD9210PBF, IRFD9220PBF, IRFDC20PBF, AON7403, IRFF034, IRFF212, IRFF213, IRFF30B, IRFF30C, IRFF640, IRFG110, IRFG5110

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