All MOSFET. IRFG110 Datasheet

 

IRFG110 Datasheet and Replacement


   Type Designator: IRFG110
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 82 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: MO-036AB
 

 IRFG110 substitution

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IRFG110 Datasheet (PDF)

 ..1. Size:267K  international rectifier
 2n7334 irfg110.pdf pdf_icon

IRFG110

PD-90396HIRFG110JANTX2N7334JANTXV2N7334POWER MOSFETREF:MIL-PRF-19500/597THRU-HOLE (MO-036AB) 100V, QUAD N-CHANNELHEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) IDIRFG110 0.7 1.0AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-stateres

Datasheet: IRFDC20PBF , IRFEA240 , IRFF034 , IRFF212 , IRFF213 , IRFF30B , IRFF30C , IRFF640 , 60N06 , IRFG5110 , IRFG5210 , IRFG6110 , IRFG9110 , IRFH3702PBF , IRFH3707PBF , IRFH3707PBF-1 , IRFH4201 .

History: OSG80R650AF | PSMN013-100BS

Keywords - IRFG110 MOSFET datasheet

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