IRFG110 Specs and Replacement
Type Designator: IRFG110
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 82 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: MO-036AB
IRFG110 substitution
- MOSFET ⓘ Cross-Reference Search
IRFG110 datasheet
2n7334 irfg110.pdf
PD-90396H IRFG110 JANTX2N7334 JANTXV2N7334 POWER MOSFET REF MIL-PRF-19500/597 THRU-HOLE (MO-036AB) 100V, QUAD N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFG110 0.7 1.0A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state res... See More ⇒
Detailed specifications: IRFDC20PBF, IRFEA240, IRFF034, IRFF212, IRFF213, IRFF30B, IRFF30C, IRFF640, 60N06, IRFG5110, IRFG5210, IRFG6110, IRFG9110, IRFH3702PBF, IRFH3707PBF, IRFH3707PBF-1, IRFH4201
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
