All MOSFET. IRFG110 Datasheet

 

IRFG110 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFG110
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 82 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: MO-036AB

 IRFG110 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFG110 Datasheet (PDF)

 ..1. Size:267K  international rectifier
 2n7334 irfg110.pdf

IRFG110 IRFG110

PD-90396HIRFG110JANTX2N7334JANTXV2N7334POWER MOSFETREF:MIL-PRF-19500/597THRU-HOLE (MO-036AB) 100V, QUAD N-CHANNELHEXFET MOSFET TECHNOLOGYProduct SummaryPart Number RDS(on) IDIRFG110 0.7 1.0AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry design achieves very low on-stateres

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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