All MOSFET. IRFG5110 Datasheet

 

IRFG5110 Datasheet and Replacement


   Type Designator: IRFG5110
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 15 nC
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 82 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: MO-036AB
 

 IRFG5110 substitution

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IRFG5110 Datasheet (PDF)

 ..1. Size:392K  international rectifier
 irfg5110.pdf pdf_icon

IRFG5110

PD - 90437DIRFG5110POWER MOSFET 100V, Combination 2N-2P-CHANNELTHRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGYProduct Summary Part Number RDS(on) ID CHANNEL IRFG5110 0.7 1.0A N IRFG5110 0.7 -1.0A PHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theefficient geometry design achieves very low on-state res

 9.1. Size:189K  international rectifier
 irfg5210.pdf pdf_icon

IRFG5110

PD - 91664BIRFG5210POWER MOSFET200V, Combination 2N-2P-CHANNELTHRU-HOLE (MO-036AB)HEXFET MOSFET TECHNOLOGYProduct Summary Part Number RDS(on) ID CHANNEL IRFG5210 1.6 0.68A N IRFG5210 1.6 -0.68A PHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheMO-036ABefficient geometry design achieves very low

Datasheet: IRFEA240 , IRFF034 , IRFF212 , IRFF213 , IRFF30B , IRFF30C , IRFF640 , IRFG110 , 5N50 , IRFG5210 , IRFG6110 , IRFG9110 , IRFH3702PBF , IRFH3707PBF , IRFH3707PBF-1 , IRFH4201 , IRFH4209D .

Keywords - IRFG5110 MOSFET datasheet

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