IRFG5110 Specs and Replacement

Type Designator: IRFG5110

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 82 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: MO-036AB

IRFG5110 substitution

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IRFG5110 datasheet

 ..1. Size:392K  international rectifier
 irfg5110.pdf pdf_icon

IRFG5110

PD - 90437D IRFG5110 POWER MOSFET 100V, Combination 2N-2P-CHANNEL THRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID CHANNEL IRFG5110 0.7 1.0A N IRFG5110 0.7 -1.0A P HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state res... See More ⇒

 9.1. Size:189K  international rectifier
 irfg5210.pdf pdf_icon

IRFG5110

PD - 91664B IRFG5210 POWER MOSFET 200V, Combination 2N-2P-CHANNEL THRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID CHANNEL IRFG5210 1.6 0.68A N IRFG5210 1.6 -0.68A P HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The MO-036AB efficient geometry design achieves very low ... See More ⇒

Detailed specifications: IRFEA240, IRFF034, IRFF212, IRFF213, IRFF30B, IRFF30C, IRFF640, IRFG110, IRFP064N, IRFG5210, IRFG6110, IRFG9110, IRFH3702PBF, IRFH3707PBF, IRFH3707PBF-1, IRFH4201, IRFH4209D

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