All MOSFET. IRFG6110 Datasheet

 

IRFG6110 Datasheet and Replacement


   Type Designator: IRFG6110
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 15 nC
   tr ⓘ - Rise Time: 25 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: MO-036AB
 

 IRFG6110 substitution

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IRFG6110 Datasheet (PDF)

 ..1. Size:391K  international rectifier
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IRFG6110

PD - 90436FIRFG6110JANTX2N7336JANTXV2N7336REF:MIL-PRF-19500/598POWER MOSFET 100V, Combination 2N-2P-CHANNELTHRU-HOLE (MO-036AB)HEXFET MOSFET TECHNOLOGYProduct Summary Part Number RDS(on) ID CHANNEL IRFG6110 0.7 1.0A N IRFG6110 1.4 -0.75A PHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. Theeffi

 ..2. Size:218K  no
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IRFG6110

INCHPOUND The documentation and process conversion measures necessary to comply with this revision MILPRF19500/598C shall be completed by 26 May 2015. w/AMENDMENT 2 26 February 2015 SUPERSEDING MILPRF19500/598C w/AMENDMENT 1 8 May 2014 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, QUAD, FIELD EFFECT, P-CHANNEL AND N-CHANNEL, SILICON, 14-PIN DUAL INLINE PA

Datasheet: IRFF212 , IRFF213 , IRFF30B , IRFF30C , IRFF640 , IRFG110 , IRFG5110 , IRFG5210 , BS170 , IRFG9110 , IRFH3702PBF , IRFH3707PBF , IRFH3707PBF-1 , IRFH4201 , IRFH4209D , IRFH4210 , IRFH4210D .

History: SI4048DY | IXTA180N10T

Keywords - IRFG6110 MOSFET datasheet

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