IRFG6110 Specs and Replacement

Type Designator: IRFG6110

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: MO-036AB

IRFG6110 substitution

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IRFG6110 datasheet

 ..1. Size:391K  international rectifier
 irfg6110.pdf pdf_icon

IRFG6110

PD - 90436F IRFG6110 JANTX2N7336 JANTXV2N7336 REF MIL-PRF-19500/598 POWER MOSFET 100V, Combination 2N-2P-CHANNEL THRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID CHANNEL IRFG6110 0.7 1.0A N IRFG6110 1.4 -0.75A P HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The effi... See More ⇒

 ..2. Size:218K  no
 irfg6110.pdf pdf_icon

IRFG6110

INCH POUND The documentation and process conversion measures necessary to comply with this revision MIL PRF 19500/598C shall be completed by 26 May 2015. w/AMENDMENT 2 26 February 2015 SUPERSEDING MIL PRF 19500/598C w/AMENDMENT 1 8 May 2014 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, QUAD, FIELD EFFECT, P-CHANNEL AND N-CHANNEL, SILICON, 14-PIN DUAL INLINE PA... See More ⇒

Detailed specifications: IRFF212, IRFF213, IRFF30B, IRFF30C, IRFF640, IRFG110, IRFG5110, IRFG5210, IRF730, IRFG9110, IRFH3702PBF, IRFH3707PBF, IRFH3707PBF-1, IRFH4201, IRFH4209D, IRFH4210, IRFH4210D

Keywords - IRFG6110 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.