IRFG9110 Datasheet and Replacement
Type Designator: IRFG9110
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 60 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
Package: MO-036AB
IRFG9110 substitution
IRFG9110 Datasheet (PDF)
irfg9110.pdf

PD - 90397GIRFG9110JANTX2N7335JANTXV2N7335REF:MIL-PRF-19500/599POWER MOSFET 100V, QUAD P-CHANNELTHRU-HOLE (MO-036AB)HEXFET MOSFET TECHNOLOGYProduct Summary Part Number RDS(on) IDIRFG9110 1.4 -0.75AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheMO-036ABefficient geometry design achieves very l
irfg9110.pdf

INCHPOUND The documentation and process conversion measures necessary to comply with this revision MILPRF19500/599E shall be completed by 27 May 2015. w/AMENDMENT 2 27 February 2015 SUPERSEDING MILPRF19500/599E w/AMENDMENT 1 9 May 2014 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, QUAD, FIELD EFFECT, P-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N
Datasheet: IRFF213 , IRFF30B , IRFF30C , IRFF640 , IRFG110 , IRFG5110 , IRFG5210 , IRFG6110 , IRFZ44N , IRFH3702PBF , IRFH3707PBF , IRFH3707PBF-1 , IRFH4201 , IRFH4209D , IRFH4210 , IRFH4210D , IRFH4213 .
History: SIHFR214 | SIHFR310 | IXTA160N10T7
Keywords - IRFG9110 MOSFET datasheet
IRFG9110 cross reference
IRFG9110 equivalent finder
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IRFG9110 substitution
IRFG9110 replacement
History: SIHFR214 | SIHFR310 | IXTA160N10T7



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