All MOSFET. IRFG9110 Datasheet

 

IRFG9110 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRFG9110
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 0.75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 60 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: MO-036AB

 IRFG9110 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRFG9110 Datasheet (PDF)

 ..1. Size:218K  international rectifier
 irfg9110.pdf

IRFG9110 IRFG9110

PD - 90397GIRFG9110JANTX2N7335JANTXV2N7335REF:MIL-PRF-19500/599POWER MOSFET 100V, QUAD P-CHANNELTHRU-HOLE (MO-036AB)HEXFET MOSFET TECHNOLOGYProduct Summary Part Number RDS(on) IDIRFG9110 1.4 -0.75AHEXFET MOSFET technology is the key to InternationalRectifiers advanced line of power MOSFET transistors. TheMO-036ABefficient geometry design achieves very l

 ..2. Size:223K  no
 irfg9110.pdf

IRFG9110 IRFG9110

INCHPOUND The documentation and process conversion measures necessary to comply with this revision MILPRF19500/599E shall be completed by 27 May 2015. w/AMENDMENT 2 27 February 2015 SUPERSEDING MILPRF19500/599E w/AMENDMENT 1 9 May 2014 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, QUAD, FIELD EFFECT, P-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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