IRFG9110 Specs and Replacement

Type Designator: IRFG9110

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.75 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: MO-036AB

IRFG9110 substitution

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IRFG9110 datasheet

 ..1. Size:218K  international rectifier
 irfg9110.pdf pdf_icon

IRFG9110

PD - 90397G IRFG9110 JANTX2N7335 JANTXV2N7335 REF MIL-PRF-19500/599 POWER MOSFET 100V, QUAD P-CHANNEL THRU-HOLE (MO-036AB) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFG9110 1.4 -0.75A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The MO-036AB efficient geometry design achieves very l... See More ⇒

 ..2. Size:223K  no
 irfg9110.pdf pdf_icon

IRFG9110

INCH POUND The documentation and process conversion measures necessary to comply with this revision MIL PRF 19500/599E shall be completed by 27 May 2015. w/AMENDMENT 2 27 February 2015 SUPERSEDING MIL PRF 19500/599E w/AMENDMENT 1 9 May 2014 PERFORMANCE SPECIFICATION SHEET TRANSISTOR, QUAD, FIELD EFFECT, P-CHANNEL, SILICON, 14-PIN DUAL INLINE PACKAGE, TYPE 2N... See More ⇒

Detailed specifications: IRFF213, IRFF30B, IRFF30C, IRFF640, IRFG110, IRFG5110, IRFG5210, IRFG6110, IRFZ44N, IRFH3702PBF, IRFH3707PBF, IRFH3707PBF-1, IRFH4201, IRFH4209D, IRFH4210, IRFH4210D, IRFH4213

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.