AM25P03-60D Specs and Replacement
Type Designator: AM25P03-60D
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 26.5 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.8 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
Package: TO-252
AM25P03-60D substitution
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AM25P03-60D datasheet
am25p03-60d.pdf
Analog Power AM25P03-60D P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) m( )ID (A) this device ideal for use in power management circuitry. Typical applications are PWMDC-DC 59 @ VGS = -4.5V 24 -26.5 converters, power management ... See More ⇒
Detailed specifications: IRFH7188, IRFH7190, IRFH7191, IRFH7194, IRFH7440, IRFH7446, IRFH7545, IRFH7787, AON6380, AM2N7002, AM2N7002DW, AM2N7002K, AM2N7002W, AM3015, AM30N02-40D, AM30N02-59D, AM30N03-40D
Keywords - AM25P03-60D MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: AP9997GJ-HF | SM3113NSU | WMO060N10HGS | WMJ90R360S
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