AM3015 Specs and Replacement

Type Designator: AM3015

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 410 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: SOP-8

AM3015 substitution

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AM3015 datasheet

 ..1. Size:704K  ait semi
 am3015.pdf pdf_icon

AM3015

AM3015 AiT Semiconductor Inc. www.ait-ic.com MOSFET P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION FEATURES The AM3015 uses advanced trench technology to V = -30V, I = -15A DS D provide excellent R , This device is suitable for R ... See More ⇒

Detailed specifications: IRFH7446, IRFH7545, IRFH7787, AM25P03-60D, AM2N7002, AM2N7002DW, AM2N7002K, AM2N7002W, STP80NF70, AM30N02-40D, AM30N02-59D, AM30N03-40D, AM30N03-59D, AM30N06-39D, AM30N06-39IE, AM30N06-65DA, AM30N08-80D

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