AM30N20-400PCFM
MOSFET. Datasheet pdf. Equivalent
Type Designator: AM30N20-400PCFM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 9
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 15.8
nC
trⓘ - Rise Time: 17.6
nS
Cossⓘ -
Output Capacitance: 81
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4
Ohm
Package:
TO-220CFM
AM30N20-400PCFM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AM30N20-400PCFM
Datasheet (PDF)
0.1. Size:307K analog power
am30n20-400pcfm.pdf
Analog Power AM30N20-400PCFMN-Channel 200-V (D-S) MOSFET PRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)400 @ VGS = 10V9 Low thermal impedance 200450 @ VGS = 5.5V8.5 Fast switching speed Typical Applications: PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters White LED bo
6.1. Size:85K analog power
am30n20-78d.pdf
Analog Power AM30N20-78DN-Channel 200-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 78 @ VGS = 10V 21converters and power management in portable and 20092 @ VGS = 5.5V 20bat
8.1. Size:293K analog power
am30n25-270p.pdf
Analog Power AM30N25-270PN-Channel 250-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)300 @ VGS = 10V Low thermal impedance 25026a450 @ VGS = 5.5V Fast switching speed Typical Applications: White LED boost converters Automotive Systems DRAIN connected Industrial DC/DC Conversion Circu
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