AM3416 PDF and Equivalents Search

 

AM3416 PDF Specs and Replacement


   Type Designator: AM3416
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: SOT-23
 

 AM3416 substitution

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AM3416 PDF Specs

 ..1. Size:612K  ait semi
am3416.pdf pdf_icon

AM3416

AM3416 AiT Semiconductor Inc. MOSFET www.ait-ic.com N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES AM3416 is available in a SOT-23 package. 20V/6A , R =26m (Max.) @V =4.5V DS(ON) GS R =37m (Max.) @V =2.5V DS(ON) GS ESD Protected Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) ... See More ⇒

 9.1. Size:315K  analog power
am3413p.pdf pdf_icon

AM3416

Analog Power AM3413P P-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 2400 @ VGS = -10V -0.74 Low thermal impedance -200 2550 @ VGS = -4.5V -0.72 Fast switching speed TSOP-6 Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits... See More ⇒

 9.2. Size:327K  analog power
am3412n.pdf pdf_icon

AM3416

Analog Power AM3412N N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 27 @ VGS = 10V 6.3 Low thermal impedance 30 35 @ VGS = 4.5V 5.5 Fast switching speed Typical Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMUM R... See More ⇒

 9.3. Size:73K  analog power
am3411pe.pdf pdf_icon

AM3416

Analog Power AM3411PE P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs PRODUCT SUMMARY utilize a high cell density trench process to provide low rDS(on) and to ensure minimal VDS (V) rDS(on) ( ) ID (A) power loss and heat dissipation. Typical 0.042 @ VGS = -4.5V -5.7 applications are DC-DC converters and -20 0.057 @ VGS = -2.5V -4.9 power management in portab... See More ⇒

Detailed specifications: AM3407 , AM3407PE , AM3411PE , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , EMB04N03H , AM3422 , AM3423P , AM3425P , AM3428N , AM3431P , AM3434N , AM3435P , AM3438NE .

History: FDB8878 | IRFP4229 | HUFA76419DF085 | FDBL0150N80

Keywords - AM3416 MOSFET specs

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