AM3460N Datasheet and Replacement
Type Designator: AM3460N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 6 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: TSOP-6
AM3460N substitution
AM3460N Datasheet (PDF)
am3460n.pdf

Analog Power AM3460NN-Channel 60V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARYprovide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical VDS (V) rDS(on) () ID (A)applications are DC-DC converters and power 0.027 @ VGS = 10 V 7.1management in portable and battery-powered 60products
am3463p.pdf

Analog Power AM3463PP-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)180 @ VGS = -10V -2.7 Low thermal impedance -60255 @ VGS = -4.5V -2.3 Fast switching speed Typical Applications: TSOP-6 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSO
Datasheet: AM3454N , AM3455P , AM3456N , AM3456NE , AM3457P , AM3457PE , AM3458N , AM3459P , 10N60 , AM3463P , AM3470N , AM3471P , AM3472N , AM3474N , AM3483 , AM3490N , AM3490NE .
History: PM514BA | AOY66923 | 2SK3019 | IRLR8256PBF | AOE66410 | TPA65R950M | IRFS7787PBF
Keywords - AM3460N MOSFET datasheet
AM3460N cross reference
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AM3460N replacement
History: PM514BA | AOY66923 | 2SK3019 | IRLR8256PBF | AOE66410 | TPA65R950M | IRFS7787PBF



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