All MOSFET. AM35N03-59D Datasheet

 

AM35N03-59D Datasheet and Replacement


   Type Designator: AM35N03-59D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 5 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.059 Ohm
   Package: TO-252
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AM35N03-59D Datasheet (PDF)

 ..1. Size:139K  analog power
am35n03-59d.pdf pdf_icon

AM35N03-59D

Analog Power AM35N03-59DN-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) m() ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 59 @ VGS = 4.5V 24converters and power management in portable and 3088 @ VGS = 2.5V 20batt

 6.1. Size:302K  analog power
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AM35N03-59D

Analog Power AM35N03-40DN-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)29 @ VGS = 4.5V34 Low thermal impedance 3043 @ VGS = 2.5V28 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIM

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History: CHM85A3PAGP | SFFX054Z | TK7P65W

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