AM3906N Specs and Replacement
Type Designator: AM3906N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.95 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
Package: TSOP-6
AM3906N substitution
- MOSFET ⓘ Cross-Reference Search
AM3906N datasheet
am3906n.pdf
Analog Power AM3906N Dual N-Channel Logical Level MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) (OHM) ID (A) this device ideal for use in power management circuitry. Typical applications are DC-DC 0.099 @ VGS = 10 V 2.5 converters, power management... See More ⇒
am3902n.pdf
Analog Power AM3902N Dual N-Channel Logic Level MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to PRODUCT SUMMARY provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical VDS (V) rDS(on) (OHM) ID (A) applications are DC-DC converters and 4.0 @ VGS = 4.5 V 0.4 power management in portable and 25 battery-powered p... See More ⇒
am3904n.pdf
Analog Power AM3904N Dual N-Channel Logic Level MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS(on) assures PRODUCT SUMMARY minimal power loss and conserves energy, making VDS (V) rDS(on) (OHM) ID (A) this device ideal for use in power management circuitry. Typical applications are logic switch 0.45 @ VGS = 4.5 V 0.5 control, power manageme... See More ⇒
Detailed specifications: AM3548C, AM3560C, AM3599C, AM35N03-40D, AM35N03-59D, AM3850C, AM3902N, AM3904N, K3569, AM3921P, AM3922N, AM3925P, AM3930N, AM3932N, AM3932NE, AM3933P, AM3940N
Keywords - AM3906N MOSFET specs
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