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2N0609 Spec and Replacement


   Type Designator: 2N0609
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 610 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0091 Ohm
   Package: TO-220C

 2N0609 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N0609 Specs

 ..1. Size:248K  inchange semiconductor
 2n0609.pdf pdf_icon

2N0609

isc N-Channel MOSFET Transistor 2N0609 FEATURES Static drain-source on-resistance RDS(on) 9.1m 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-Source... See More ⇒

Detailed specifications: ITF87008DQT , ITF87012SVT , ITF87052SVT , ITF87056DQT , ITF87068SQT , ITF87072DK8T , 12N65KL-TF , 20N03 , CS150N03A8 , 2SK2080 , 2SK2652 , 2SK2654 , 2SK3530 , 2SK3681 , 3N150S , 80N08A , AOB12N65 .

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