2N0609 Datasheet. Specs and Replacement

Type Designator: 2N0609  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 29 nS

Cossⓘ - Output Capacitance: 610 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0091 Ohm

Package: TO-220C

2N0609 substitution

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2N0609 datasheet

 ..1. Size:248K  inchange semiconductor
 2n0609.pdf pdf_icon

2N0609

isc N-Channel MOSFET Transistor 2N0609 FEATURES Static drain-source on-resistance RDS(on) 9.1m 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra Low On-resistance Fast Switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 55 V DSS V Gate-Source... See More ⇒

Detailed specifications: ITF87008DQT, ITF87012SVT, ITF87052SVT, ITF87056DQT, ITF87068SQT, ITF87072DK8T, 12N65KL-TF, 20N03, CS150N03A8, 2SK2080, 2SK2652, 2SK2654, 2SK3530, 2SK3681, 3N150S, 80N08A, AOB12N65

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.