All MOSFET. 2N0609 Datasheet

 

2N0609 Datasheet and Replacement


   Type Designator: 2N0609
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 60 nC
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 610 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0091 Ohm
   Package: TO-220C
 

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2N0609 Datasheet (PDF)

 ..1. Size:248K  inchange semiconductor
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2N0609

isc N-Channel MOSFET Transistor 2N0609FEATURESStatic drain-source on-resistance:RDS(on)9.1m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra Low On-resistanceFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-Source

Datasheet: ITF87008DQT , ITF87012SVT , ITF87052SVT , ITF87056DQT , ITF87068SQT , ITF87072DK8T , 12N65KL-TF , 20N03 , 20N50 , 2SK2080 , 2SK2652 , 2SK2654 , 2SK3530 , 2SK3681 , 3N150S , 80N08A , AOB12N65 .

Keywords - 2N0609 MOSFET datasheet

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