All MOSFET. AM4953P Datasheet

 

AM4953P Datasheet and Replacement


   Type Designator: AM4953P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: SO-8
 

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AM4953P Datasheet (PDF)

 ..1. Size:321K  analog power
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AM4953P

Analog Power AM4953PP-Channel 30-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID(A) Low r trench technology DS(on)52 @ VGS = -10V -5.2 Low thermal impedance -3089 @ VGS = -4.5V -4.0 Fast switching speed Typical Applications: White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABSOLUTE MAXIMU

 8.1. Size:535K  ait semi
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AM4953P

AiT Semiconductor Inc. AM4953 www.ait-ic.com MOSFET -30V DUAL P-CHANNEL ENHANCEMENT MODE DESCRIPTION FEATURES The AM4953 is the Dual P-Channel logic -30V/-5.3A, R =46m(typ.)@V =-10V DS(ON) GSenhancement mode power field effect transistor is -30V/-3.6A, R =75m(typ.)@V =-4.5V DS(ON) GSproduced using high cell density. Advanced trench Super high density cell desig

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: HUFA75343S3ST | HUF75531SK8T | DHI029N08 | KDS4953 | TPA60R530M | IPB530N15N3G

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