AM4970N Specs and Replacement
Type Designator: AM4970N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 81 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: SO-8
AM4970N substitution
- MOSFET ⓘ Cross-Reference Search
AM4970N datasheet
am4970n.pdf
Analog Power AM4970N Dual N-Channel 200-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 300 @ VGS = 10V 2.2 Low thermal impedance 200 340 @ VGS = 4.5V 2.1 Fast switching speed SO-8 Typical Applications PoE PSE and PD Circuits LED Inverter Circuits 48V-Input DC/DC Conversion Circuits AB... See More ⇒
Detailed specifications: AM4940N, AM4942N, AM4953, AM4953P, AM4960N, AM4962NE, AM4963P, AM4964NT, P60NF06, AM4990N, AM4990NE, AM4992N, AM4998N, AM50N03-12D, AM50N03-12I, AM50N06-15D, AM50N06-20D
Keywords - AM4970N MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IRFH5020PBF | RAL035P01 | NVMFD5C650NL
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