All MOSFET. AM4970N Datasheet

 

AM4970N Datasheet and Replacement


   Type Designator: AM4970N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 81 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SO-8
 

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AM4970N Datasheet (PDF)

 ..1. Size:309K  analog power
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AM4970N

Analog Power AM4970NDual N-Channel 200-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)300 @ VGS = 10V2.2 Low thermal impedance 200340 @ VGS = 4.5V2.1 Fast switching speed SO-8 Typical Applications: PoE PSE and PD Circuits LED Inverter Circuits 48V-Input DC/DC Conversion Circuits AB

Datasheet: AM4940N , AM4942N , AM4953 , AM4953P , AM4960N , AM4962NE , AM4963P , AM4964NT , AO3401 , AM4990N , AM4990NE , AM4992N , AM4998N , AM50N03-12D , AM50N03-12I , AM50N06-15D , AM50N06-20D .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

Keywords - AM4970N MOSFET datasheet

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