AM5350N Datasheet and Replacement
Type Designator: AM5350N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 37 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: DFN3X2
AM5350N substitution
AM5350N Datasheet (PDF)
am5350n.pdf

Analog Power AM5350NN-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features:rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)700 @ VGS = 10V1.3 Low thermal impedance1501200 @ VGS = 4.5V1 Fast switching speed Small Footprint DFN3x2-8L packageDFN3x2-8L EPTypical Applications:DD Telecom DC/DC convertersDD White LED boost conver
am5352.pdf

AM5352 AiT Semiconductor Inc. www.ait-ic.com MOSFET 20V N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM5352 is the N-Channel logic enhancement 20V/0.6A, R =200m(typ.)@V =4.5V DS(ON) GSmode power field effect transistor which is produced 20V/0.5A, R =240m(typ.)@V =2.5V DS(ON) GSusing high cell density advanced trench technology to 20V/0.4A, R =420m
Datasheet: AM50N10-55FP , AM50P02-09D , AM50P02-16D , AM50P03-09D , AM50P04-16PCFM , AM50P04-20D , AM50P06-15D , AM50P10-117P , AO4468 , AM5352 , AM5400N , AM5423P , AM5430N , AM5460N , AM5480N , AM5521C , AM5829P .
History: YJL2300A | IXTT140N10P | SSF2341E | STD35NF3LLT4 | HM609K | NVMFS5834NL | DMG4407SSS
Keywords - AM5350N MOSFET datasheet
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History: YJL2300A | IXTT140N10P | SSF2341E | STD35NF3LLT4 | HM609K | NVMFS5834NL | DMG4407SSS



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