AM5423P Datasheet and Replacement
Type Designator: AM5423P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 8.4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 580 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: DFN3X2
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AM5423P Datasheet (PDF)
am5423p.pdf

Analog Power AM5423PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) (OHM) ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 0.024 @ VGS = -4.5V -8.4converters and power management in portable and -200.031 @ VGS = -2.5V -7.4
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SM3320NSQG | MC08N005C | IRLR024 | CED05N8 | FDS8934A | AON6794 | BL10N70-A
Keywords - AM5423P MOSFET datasheet
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History: SM3320NSQG | MC08N005C | IRLR024 | CED05N8 | FDS8934A | AON6794 | BL10N70-A



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