AM5423P Datasheet and Replacement
Type Designator: AM5423P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 8.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 580 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: DFN3X2
AM5423P substitution
AM5423P Datasheet (PDF)
am5423p.pdf

Analog Power AM5423PP-Channel 20-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low VDS (V) rDS(on) (OHM) ID (A)rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC 0.024 @ VGS = -4.5V -8.4converters and power management in portable and -200.031 @ VGS = -2.5V -7.4
Datasheet: AM50P03-09D , AM50P04-16PCFM , AM50P04-20D , AM50P06-15D , AM50P10-117P , AM5350N , AM5352 , AM5400N , BS170 , AM5430N , AM5460N , AM5480N , AM5521C , AM5829P , AM5853 , AM5920N , AM5922N .
History: GSM2304S | MTNK5S3 | 2SK2938L | 2SK1081-01 | TPHR8504PL | LN100 | TPC65R600C
Keywords - AM5423P MOSFET datasheet
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History: GSM2304S | MTNK5S3 | 2SK2938L | 2SK1081-01 | TPHR8504PL | LN100 | TPC65R600C



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