AM5460N Datasheet and Replacement
Type Designator: AM5460N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.1 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm
Package: DFN3X2
AM5460N substitution
AM5460N Datasheet (PDF)
am5460n.pdf

Analog Power AM5460NN-Channel 60-V (D-S) MOSFETPRODUCT SUMMARYKey Features:rDS(on) (m)VDS (V) ID(A) Low r trench technologyDS(on)82 @ VGS = 10V5 Low thermal impedance60115 @ VGS = 4.5V4.1 Fast switching speed Small Footprint DFN3x2-8L packageDFN3x2-8L EPTypical Applications:DD Telecom DC/DC convertersD White LED boost converters D
Datasheet: AM50P04-20D , AM50P06-15D , AM50P10-117P , AM5350N , AM5352 , AM5400N , AM5423P , AM5430N , IRF3205 , AM5480N , AM5521C , AM5829P , AM5853 , AM5920N , AM5922N , AM5931P , AM5932N .
History: IRFS640A | STW265N6F6AG | TPCA8060-H | FTK138D | TPCA8102 | BSS215P | 2SJ590LS
Keywords - AM5460N MOSFET datasheet
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History: IRFS640A | STW265N6F6AG | TPCA8060-H | FTK138D | TPCA8102 | BSS215P | 2SJ590LS



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