AM5460N Specs and Replacement

Type Designator: AM5460N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.1 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.082 Ohm

Package: DFN3X2

AM5460N substitution

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AM5460N datasheet

 ..1. Size:220K  analog power
 am5460n.pdf pdf_icon

AM5460N

Analog Power AM5460N N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 82 @ VGS = 10V 5 Low thermal impedance 60 115 @ VGS = 4.5V 4.1 Fast switching speed Small Footprint DFN3x2-8L package DFN3x2-8L EP Typical Applications D D Telecom DC/DC converters D White LED boost converters D... See More ⇒

Detailed specifications: AM50P04-20D, AM50P06-15D, AM50P10-117P, AM5350N, AM5352, AM5400N, AM5423P, AM5430N, IRF3205, AM5480N, AM5521C, AM5829P, AM5853, AM5920N, AM5922N, AM5931P, AM5932N

Keywords - AM5460N MOSFET specs

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