All MOSFET. AM5480N Datasheet

 

AM5480N MOSFET. Datasheet pdf. Equivalent


   Type Designator: AM5480N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.6 nC
   trⓘ - Rise Time: 10 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.086 Ohm
   Package: DFN2X3

 AM5480N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM5480N Datasheet (PDF)

 ..1. Size:59K  analog power
 am5480n.pdf

AM5480N AM5480N

Analog Power AM5480NN-Channel 80-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 82 @ VGS = 10V 5.4converters and power management in portable and 80battery-powered products s

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History: ELM34604AA | IRFH5406PBF

 

 
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