All MOSFET. AM5521C Datasheet

 

AM5521C Datasheet and Replacement


   Type Designator: AM5521C
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: DFN2X3
 

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AM5521C Datasheet (PDF)

 ..1. Size:70K  analog power
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AM5521C

Analog Power AM5521CN & P-Channel 20-V (D-S) MOSFETPRODUCT SUMMARYThese miniature surface mount MOSFETs VDS (V) rDS(on) () ID (A)utilize a high cell density trench process to 0.058 @ V = 4.5V 5GSprovide low rDS(on) and to ensure minimal 20power loss and heat dissipation. Typical 0.077 @ V = 2.5V 4.3GSapplications are DC-DC converters and 0.064 @ V = -4.5V -4.7GS

Datasheet: AM50P10-117P , AM5350N , AM5352 , AM5400N , AM5423P , AM5430N , AM5460N , AM5480N , IRF840 , AM5829P , AM5853 , AM5920N , AM5922N , AM5931P , AM5932N , AM60N02-09D , AM60N02-10D .

History: IPB80N06S2L-11 | SI8410DB | AP30T10GK

Keywords - AM5521C MOSFET datasheet

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