AM5521C Specs and Replacement

Type Designator: AM5521C

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: DFN2X3

AM5521C substitution

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AM5521C datasheet

 ..1. Size:70K  analog power
 am5521c.pdf pdf_icon

AM5521C

Analog Power AM5521C N & P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs VDS (V) rDS(on) ( ) ID (A) utilize a high cell density trench process to 0.058 @ V = 4.5V 5 GS provide low rDS(on) and to ensure minimal 20 power loss and heat dissipation. Typical 0.077 @ V = 2.5V 4.3 GS applications are DC-DC converters and 0.064 @ V = -4.5V -4.7 GS ... See More ⇒

Detailed specifications: AM50P10-117P, AM5350N, AM5352, AM5400N, AM5423P, AM5430N, AM5460N, AM5480N, IRF840, AM5829P, AM5853, AM5920N, AM5922N, AM5931P, AM5932N, AM60N02-09D, AM60N02-10D

Keywords - AM5521C MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.