All MOSFET. AM5829P Datasheet

 

AM5829P MOSFET. Datasheet pdf. Equivalent


   Type Designator: AM5829P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.4 V
   |Id|ⓘ - Maximum Drain Current: 2.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6 nC
   trⓘ - Rise Time: 20 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: CF1206-8

 AM5829P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AM5829P Datasheet (PDF)

 ..1. Size:254K  analog power
 am5829p.pdf

AM5829P AM5829P

Analog Power AM5829PP-Channel 20-V (D-S) MOSFET With Schottky DiodeMOSFET PRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a V (V rDS(on) (O M) ID (A)) Hhigh cell density trench process to provide low DSrDS(on) and to ensure minimal power loss and heat 0.110 @ V = -4.5V 3.6GS-20dissipation. Typical applications are DC-DC 0.160 @ V = -2.5V 3.0GSconve

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: EMF02P02H | IRFS3607 | BUK9675-100A

 

 
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