AM5829P Specs and Replacement

Type Designator: AM5829P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: CF1206-8

AM5829P substitution

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AM5829P datasheet

 ..1. Size:254K  analog power
 am5829p.pdf pdf_icon

AM5829P

Analog Power AM5829P P-Channel 20-V (D-S) MOSFET With Schottky Diode MOSFET PRODUCT SUMMARY These miniature surface mount MOSFETs utilize a V (V rDS(on) (O M) ID (A) ) H high cell density trench process to provide low DS rDS(on) and to ensure minimal power loss and heat 0.110 @ V = -4.5V 3.6 GS -20 dissipation. Typical applications are DC-DC 0.160 @ V = -2.5V 3.0 GS conve... See More ⇒

Detailed specifications: AM5350N, AM5352, AM5400N, AM5423P, AM5430N, AM5460N, AM5480N, AM5521C, 20N60, AM5853, AM5920N, AM5922N, AM5931P, AM5932N, AM60N02-09D, AM60N02-10D, AM60N03-09D

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.