All MOSFET. AM5829P Datasheet

 

AM5829P Datasheet and Replacement


   Type Designator: AM5829P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: CF1206-8
 

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AM5829P Datasheet (PDF)

 ..1. Size:254K  analog power
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AM5829P

Analog Power AM5829PP-Channel 20-V (D-S) MOSFET With Schottky DiodeMOSFET PRODUCT SUMMARYThese miniature surface mount MOSFETs utilize a V (V rDS(on) (O M) ID (A)) Hhigh cell density trench process to provide low DSrDS(on) and to ensure minimal power loss and heat 0.110 @ V = -4.5V 3.6GS-20dissipation. Typical applications are DC-DC 0.160 @ V = -2.5V 3.0GSconve

Datasheet: AM5350N , AM5352 , AM5400N , AM5423P , AM5430N , AM5460N , AM5480N , AM5521C , IRF840 , AM5853 , AM5920N , AM5922N , AM5931P , AM5932N , AM60N02-09D , AM60N02-10D , AM60N03-09D .

History: IPP80N04S3-04

Keywords - AM5829P MOSFET datasheet

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