AM5920N Specs and Replacement

Type Designator: AM5920N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: CF1206-8

AM5920N substitution

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AM5920N datasheet

 ..1. Size:151K  analog power
am5920n.pdf pdf_icon

AM5920N

Analog Power AM5920N Dual N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 58 @ VGS = 4.5V 5.0 battery-powered products ... See More ⇒

 9.1. Size:296K  analog power
am5922n.pdf pdf_icon

AM5920N

Analog Power AM5922N N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 23 @ VGS = 4.5V 7.9 Low thermal impedance 20 33 @ VGS = 2.5V 6.6 Fast switching speed Typical Applications DFN3x2-8L White LED boost converters S1 D1 Automotive Systems G1 Industrial DC/DC Conversion C... See More ⇒

Detailed specifications: AM5400N, AM5423P, AM5430N, AM5460N, AM5480N, AM5521C, AM5829P, AM5853, IRF540, AM5922N, AM5931P, AM5932N, AM60N02-09D, AM60N02-10D, AM60N03-09D, AM60N04-12D, AM60N10-13D

Keywords - AM5920N MOSFET specs

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