AM5920N Specs and Replacement
Type Designator: AM5920N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: CF1206-8
AM5920N substitution
- MOSFET ⓘ Cross-Reference Search
AM5920N datasheet
am5920n.pdf
Analog Power AM5920N Dual N-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( )ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 58 @ VGS = 4.5V 5.0 battery-powered products ... See More ⇒
am5922n.pdf
Analog Power AM5922N N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID(A) Low r trench technology DS(on) 23 @ VGS = 4.5V 7.9 Low thermal impedance 20 33 @ VGS = 2.5V 6.6 Fast switching speed Typical Applications DFN3x2-8L White LED boost converters S1 D1 Automotive Systems G1 Industrial DC/DC Conversion C... See More ⇒
Detailed specifications: AM5400N, AM5423P, AM5430N, AM5460N, AM5480N, AM5521C, AM5829P, AM5853, IRF540, AM5922N, AM5931P, AM5932N, AM60N02-09D, AM60N02-10D, AM60N03-09D, AM60N04-12D, AM60N10-13D
Keywords - AM5920N MOSFET specs
AM5920N cross reference
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