All MOSFET. AM5931P Datasheet

 

AM5931P Datasheet and Replacement


   Type Designator: AM5931P
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.084 Ohm
   Package: CF1206-8
 

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AM5931P Datasheet (PDF)

 ..1. Size:54K  analog power
 am5931p.pdf pdf_icon

AM5931P

Analog Power AM5931PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.084 @ VGS = -10V -3.1converters and power management in portable and -30battery-powered product

 9.1. Size:68K  analog power
 am5932n.pdf pdf_icon

AM5931P

Analog Power AM5932NDual N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 35 @ VGS = 10V 6.4battery-powered products

Datasheet: AM5430N , AM5460N , AM5480N , AM5521C , AM5829P , AM5853 , AM5920N , AM5922N , IRF640 , AM5932N , AM60N02-09D , AM60N02-10D , AM60N03-09D , AM60N04-12D , AM60N10-13D , AM60N10-70P , AM60N10-70PCFM .

History: RFP5P12 | IRF820ASPBF | IRFY430CM

Keywords - AM5931P MOSFET datasheet

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