AM5931P Datasheet and Replacement
Type Designator: AM5931P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 3.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 20 nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.084 Ohm
Package: CF1206-8
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AM5931P Datasheet (PDF)
am5931p.pdf

Analog Power AM5931PP-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A)dissipation. Typical applications are DC-DC 0.084 @ VGS = -10V -3.1converters and power management in portable and -30battery-powered product
am5932n.pdf

Analog Power AM5932NDual N-Channel 30-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARYrDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC converters and power management in portable and 35 @ VGS = 10V 6.4battery-powered products
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: AP6679GI-HF | H7N1002LM | FCPF7N60YDTU | STF13N95K3 | SPD04N60S5 | SM6A12NSFP
Keywords - AM5931P MOSFET datasheet
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History: AP6679GI-HF | H7N1002LM | FCPF7N60YDTU | STF13N95K3 | SPD04N60S5 | SM6A12NSFP



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