AM5932N Specs and Replacement

Type Designator: AM5932N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: CF1206-8

AM5932N substitution

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AM5932N datasheet

 ..1. Size:68K  analog power
 am5932n.pdf pdf_icon

AM5932N

Analog Power AM5932N Dual N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m( ) ID (A) dissipation. Typical applications are DC-DC converters and power management in portable and 35 @ VGS = 10V 6.4 battery-powered products ... See More ⇒

 9.1. Size:54K  analog power
 am5931p.pdf pdf_icon

AM5932N

Analog Power AM5931P P-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low PRODUCT SUMMARY rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) (OHM) ID (A) dissipation. Typical applications are DC-DC 0.084 @ VGS = -10V -3.1 converters and power management in portable and -30 battery-powered product... See More ⇒

Detailed specifications: AM5460N, AM5480N, AM5521C, AM5829P, AM5853, AM5920N, AM5922N, AM5931P, IRFZ44, AM60N02-09D, AM60N02-10D, AM60N03-09D, AM60N04-12D, AM60N10-13D, AM60N10-70P, AM60N10-70PCFM, AM60P04-10D

Keywords - AM5932N MOSFET specs

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