All MOSFET. AM60P04-10D Datasheet

 

AM60P04-10D Datasheet and Replacement


   Type Designator: AM60P04-10D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 58 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 12 nS
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-252
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AM60P04-10D Datasheet (PDF)

 ..1. Size:153K  analog power
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AM60P04-10D

Analog Power AM60P04-10DP-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 10 @ VGS = -10V 58converters and power management in portable and -40battery-powered produ

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History: AP73T02GH-HF | OSG60R099HSZF | IRF820A | SM2206NSQG | AP2732GK | KTJ6164S | BUK9213-30A

Keywords - AM60P04-10D MOSFET datasheet

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