AM60P04-10D Datasheet and Replacement
Type Designator: AM60P04-10D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 58 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 12 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO-252
AM60P04-10D substitution
AM60P04-10D Datasheet (PDF)
am60p04-10d.pdf

Analog Power AM60P04-10DP-Channel 40-V (D-S) MOSFETThese miniature surface mount MOSFETs utilize a PRODUCT SUMMARYhigh cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat VDS (V) rDS(on) m() ID (A)dissipation. Typical applications are DC-DC 10 @ VGS = -10V 58converters and power management in portable and -40battery-powered produ
Datasheet: AM5932N , AM60N02-09D , AM60N02-10D , AM60N03-09D , AM60N04-12D , AM60N10-13D , AM60N10-70P , AM60N10-70PCFM , AON6414A , AM6378 , AM6401 , AM6411P , AM6415 , AM6441P , AM6520C , AM6544C , AM6602 .
History: ELM3C0850A | RQK0303MGDQA | SM2413PSAN | PA002FMG | BUK9529-100B | IPD105N04LG | AON3402
Keywords - AM60P04-10D MOSFET datasheet
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History: ELM3C0850A | RQK0303MGDQA | SM2413PSAN | PA002FMG | BUK9529-100B | IPD105N04LG | AON3402



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